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Semiconductor
Semiconductor MSC23B236A-XXBS8/DS8
DESCRIPTION
MSC23B236A-XXBS8/DS8
2,097,152-Word 36-Bit DRAM MODULE : FAST PAGE MODE TYPE
The Oki MSC23B236A-XXBS8/DS8 is a fully decoded 2,097,152-word 36-bit CMOS dynamic random access memory composed of four 16-Mb (1M 16) DRAMs in SOJ and four 2-Mb (1M 2) DRAMs in SOJ. The mounting of eight DRAMs together with decoupling capacitors on a 72pin glass epoxy SIMM Package supports any application where high density and large capacity of storage memory are required.
FEATURES
* 2,097,152-word 36-bit (Parity) organization * 72-pin SIMM MSC23B236A-XXBS8 : Gold tab MSC23B236A-xxDS8 : Solder tab * Single 5 V supply 10% tolerance * Input : TTL compatible * Output : TTL compatible, 3-state, nonlatch * Refresh : 1024 cycles/16 ms * CAS before RAS refresh, CAS before RAS hidden refresh, RAS-only refresh capability * Fast Page Mode capability
PRODUCT FAMILY
Family MSC23B236A-60BS8/DS8 MSC23B236A-70BS8/DS8 Access Time (Max.) tRAC 60 ns 70 ns tAA 30 ns 35 ns tCAC 15 ns 20 ns Power Dissipation Cycle Time Operating (Max.) Standby (Max.) (Min.) 110 ns 130 ns 3410 mW 3080 mW 44 mW
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MSC23B236A-XXBS8/DS8
Semiconductor
PIN CONFIGURATION
MSC23B236A-XXBS8/DS8
*1 107.95 0.2 101.19 Typ. (Unit : mm) 9.3 Max.
3.38 0.13
f 3.18 25.4 0.13 10.16 6.35 0.13 0.13 2.03 0.13 1.27 0.1 6.35 Typ. 72 R1.57 6.35 95.25 1.04 Typ. +0.1 1.27 -0.08 5.7 Min.
1
*1 The common size difference of the board width 12.5 mm of its height is specified as 0.2. The value above 12.5 mm is specified as 0.5.
Pin No. Pin Name 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 VSS DQ0 DQ18 DQ1 DQ19 DQ2 DQ20 DQ3 DQ21 VCC NC A0 A1 A2 A3
Pin No. Pin Name 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 A4 A5 A6 NC DQ4 DQ22 DQ5 DQ23 DQ6 DQ24 DQ7 DQ25 A7 NC VCC
Pin No. Pin Name 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 A8 A9 RAS3 RAS2 DQ26 DQ8 DQ17 DQ35 VSS CAS0 CAS2 CAS3 CAS1 RAS0 RAS1
Pin No. Pin Name 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 NC WE NC DQ9 DQ27 DQ10 DQ28 DQ11 DQ29 DQ12 DQ30 DQ13 DQ31 VCC DQ32
Pin No. Pin Name 61 62 63 64 65 66 67 68 69 70 71 72 DQ14 DQ33 DQ15 DQ34 DQ16 NC PD1 PD2 PD3 PD4 NC VSS
Presence Detect Pins
Pin No. 67 68 69 70 Pin Name PD1 PD2 PD3 PD4 MSC23B236A -60BS8/DS8 NC NC NC NC MSC23B236A -70BS8/DS8 NC NC VSS NC
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Semiconductor
MSC23B236A-XXBS8/DS8
BLOCK DIAGRAM
A0 - A9 CAS0 CAS1 WE A0 - A9 RAS0 RAS DQ1 DQ2 DQ3 DQ4 DQ5 DQ6 DQ7 DQ8 DQ9 DQ10 DQ11 DQ12 DQ13 DQ14 DQ15 DQ16 DQ0 DQ1 DQ2 DQ3 DQ4 DQ5 DQ6 DQ7 DQ9 DQ10 DQ11 DQ12 DQ13 DQ14 DQ15 DQ16 DQ1 DQ2 DQ3 DQ4 DQ5 DQ6 DQ7 DQ8 DQ9 DQ10 DQ11 DQ12 DQ13 DQ14 DQ15 DQ16 VCC A0 - A9 RAS RAS1
LCAS
LCAS
UCAS
UCAS
WE
WE
OE VSS
OE VSS
VCC
A0 - A9 RAS CAS1 CAS2 WE OE VSS A0 - A9 RAS2 RAS
DQ1 DQ2
DQ8 DQ17
DQ1 DQ2
A0 - A9 RAS CAS1 CAS2 WE OE VSS A0 - A9 RAS RAS3
VCC DQ1 DQ2 DQ3 DQ4 DQ5 DQ6 DQ7 DQ8 DQ9 DQ10 DQ11 DQ12 DQ13 DQ14 DQ15 DQ16 DQ18 DQ19 DQ20 DQ21 DQ22 DQ23 DQ24 DQ25 DQ27 DQ28 DQ29 DQ30 DQ31 DQ32 DQ33 DQ34
VCC DQ1 DQ2 DQ3 DQ4 DQ5 DQ6 DQ7 DQ8 DQ9 DQ10 DQ11 DQ12 DQ13 DQ14 DQ15 DQ16 VCC
LCAS
LCAS
UCAS
UCAS
WE
WE
OE VSS
OE VSS
VCC
A0 - A9 RAS CAS1 CAS2 WE OE VSS CAS2 CAS3 VCC VSS
DQ1 DQ2
DQ26 DQ35
DQ1 DQ2
A0 - A9 RAS CAS1 CAS2 WE OE VSS
VCC
VCC
C1
C8
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MSC23B236A-XXBS8/DS8
Semiconductor
ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings
Parameter Voltage on Any Pin Relative to VSS Voltage VCC Supply Relative to VSS Short Circuit Output Current Power Dissipation Operating Temperature Storage Temperature Symbol VIN, VOUT VCC IOS PD Topr Tstg Rating -1.0 to 7.0 -1.0 to 7.0 50 9.2 0 to 70 -40 to 125 Unit V V mA W C C
Note: Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded. Functional operation should be restricted to the conditions as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Recommended Operating Conditions
Parameter Power Supply Voltage Input High Voltage Input Low Voltage Symbol VCC VSS VIH VIL Min. 4.5 0 2.4 -1.0 Typ. 5.0 0 -- -- Max. 5.5 0 6.5 0.8 (Ta = 0C to 70C) Unit V V V V
Capacitance
Parameter Input Capacitance (A0 - A9) Input Capacitance (WE) Input Capacitance (RAS0 - RAS3) Input Capacitance (CAS0 - CAS3) I/O Capacitance (DQ0 - DQ35) Symbol CIN1 CIN2 CIN3 CIN4 CDQ Typ. -- -- -- -- -- Max. 53 65 20 35 20
(Ta = 25C, f = 1 MHz) Unit pF pF pF pF pF
Note : Capacitance measured with Boonton Meter.
162
Semiconductor DC Characteristics
MSC23B236A Parameter
Symbol
MSC23B236A-XXBS8/DS8
(VCC = 5 V 10%, Ta = 0C to 70C) MSC23B236A -70BS8/DS8 Min. -80 Max. 80 A Unit Note Condition 0 V VI 6.5 V; -60BS8/DS8 Min. Max. 80
Input Leakage Current
ILI
All other pins not under test = 0 V DOUT disable 0 V VO 5.5 V IOH = -5.0 mA IOL = 4.2 mA RAS, CAS cycling, tRC = Min. RAS, CAS = VIH
-80
Output Leakage Current Output High Voltage Output Low Voltage Average Power Supply Current (Operating) Power Supply Current (Standby) Average Power Supply Current (RAS-only Refresh) Average Power Supply Current (CAS before RAS Refresh) Average Power Supply Current (Fast Page Mode)
ILO VOH VOL ICC1
-20 2.4 0 -- -- --
20 VCC 0.4 620 16 8
-20 2.4 0 -- -- --
20 VCC 0.4 560 16 8
A V V mA 1, 2 mA mA 1 1
ICC2
RAS, CAS VCC -0.2 V RAS cycling,
ICC3
CAS = VIH, tRC = Min. RAS cycling,
--
620
--
560
mA 1, 2
ICC6
CAS before RAS, tRC = Min. RAS = VIL,
--
620
--
560
mA 1, 2
ICC7
CAS cycling, tPC = Min.
--
480
--
450
mA 1, 3
Notes: 1. ICC Max. is specified as ICC for output open condition. 2. Address can be changed once or less while RAS=VIL. 3. Address can be changed once or less while CAS=VIH.
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MSC23B236A-XXBS8/DS8
Semiconductor
AC Characteristics (1/2)
(VCC = 5 V 10%, Ta = 0C to 70C) MSC23B236A MSC23B236A -70BS8/DS8 Min. 130 45 -- -- -- -- 0 0 3 -- 50 70 70 20 10 20 70 5 40 20 15 0 10 0 15 55 35 Max. -- -- 70 20 35 40 -- 20 50 16 -- 10k 100k -- -- 10k -- -- -- 50 35 -- -- -- -- -- --
Symbol
Note 1,2,3 Unit Note ns ns ns 4, 5, 6 ns 4, 5 ns ns ns ns ns ms ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns 5 6 4, 6 4 4 7 3
Parameter Random Read or Write Cycle Time Fast Page Mode Cycle Time Access Time from RAS Access Time from CAS Access Time from Column Address Access Time from CAS Precharge Output Low Impedance Time from CAS Output Buffer Turn-off Delay Time Transition Time Refresh Period RAS Precharge Time RAS Pulse Width RAS Pulse Width (Fast Page Mode) RAS Hold Time CAS Precharge Time CAS Pulse Width CAS Hold Time CAS to RAS Precharge Time RAS Hold Time from CAS Precharge RAS to CAS Delay Time RAS to Column Address Delay Time Row Address Set-up Time Row Address Hold Time Column Address Set-up Time Column Address Hold Time Column Address Hold Time from RAS Column Address to RAS Lead Time
-60BS8/DS8 Min. Max. -- -- 60 15 30 35 -- 15 50 16 -- 10k 100k -- -- 10k -- -- -- 45 30 -- -- -- -- -- -- 110 40 -- -- -- -- 0 0 3 -- 40 60 60 15 10 15 60 5 35 20 15 0 10 0 15 50 30
tRC tPC tRAC tCAC tAA tCPA tCLZ tOFF tT tREF tRP tRAS tRASP tRSH tCP tCAS tCSH tCRP tRHCP tRCD tRAD tASR tRAH tASC tCAH tAR tRAL
164
Semiconductor
MSC23B236A-XXBS8/DS8
AC Characteristics (2/2)
(VCC = 5 V 10%, Ta = 0C to 70C) Note 1,2,3 MSC23B236A MSC23B236A -70BS8/DS8 Min. Max. 0 0 0 0 15 55 15 20 20 0 15 55 5 5 15 10 10 -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- Unit Note ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns 8 8
Symbol
Parameter Read Command Set-up Time Read Command Hold Time Read Command Hold Time referenced to RAS Write Command Set-up Time Write Command Hold Time Write Command Hold Time from RAS Write Command Pulse Width Write Command to RAS Lead Time Write Command to CAS Lead Time Data-in Set-up Time Data-in Hold Time Data-in Hold Time from RAS
-60BS8/DS8 Min. Max. 0 0 0 0 10 45 10 15 15 0 15 50 5 5 10 10 10 -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- --
tRCS tRCH tRRH tWCS tWCH tWCR tWP tRWL tCWL tDS tDH tDHR
CAS Active Delay Time from RAS Precharge tRPC RAS to CAS Set-up Time (CAS before RAS) tCSR RAS to CAS Hold Time (CAS before RAS) tCHR WE to RAS Precharge Time (CAS before RAS) tWRP WE Hold Time from RAS (CAS before RAS) tWRH
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MSC23B236A-XXBS8/DS8
Semiconductor
Notes:
1. A start-up delay of 200 s is required after power-up followed by a minimum of eight initialization cycles (RAS-only refresh or CAS before RAS refresh) before proper device operation is achieved. When using the internal refresh counter, a minimum of eight CAS before RAS initialization cycles is required. 2. AC mesurement assume tT = 5 ns. 3. VIH (Min.) and VIL (Max.) are reference levels for measuring input timing signals. Transition times are measured between VIH and VIL. 4. Measured with a load circuit equivalent to 2 TTL loads and 100 pF. 5. Operation within the tRCD (Max.) limit ensures that tRAC (Max.) can be met. tRCD (Max.) is specified as a reference point only. If tRCD is greater than the specified tRCD (Max.) limit, access time is controlled by tCAC. 6. Operation within the tRAD (Max.) limit ensures that tRAC (Max.) can be met. tRAD (Max.) is specified as a reference point only. If tRAD is greater than the specified tRAD (Max.) limit, access time is controlled by tAA. 7. tOFF (Max.) defines the time at which the output achieves an open circuit condition and is not referenced to output voltage levels. 8. tRCH or tRRH must be satisfied for a read cycle.
See ADDENDUM B for AC Timing Waveforms
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